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Brillouin Scattering, Part Two, Volume 110 in the Semiconductors and Semimetal series, marks the centenary of Leon Brillouin''s seminal 1922 paper which provided a detailed theory on the effect that now bears his name. Sections in this new release include Optical Fiber Sensors Based on Stimulated Brillouin scattering, Brillouin-based RF frequency sources, SBS for Microwave Photonics (MWP), Engineerable Brillouin processes for integrated photonics, SBS in optical communication systems - the good, the bad and the ugly, Slow light, dynamic gratings and light storage, Non-reciprocity in Brillouin scattering, Electromechanical Brillouin Scattering, and Brillouin light scattering for studying mechanics of biological systems. Stimulated Brillouin Scattering (SBS) is the strongest third order nonlinearity and plays an important role in contemporary science and applications, particularly lasers, communications, fiber optics and basic physics. This volume provides different perspectives on current technological contexts of SBS in a range of different application areas, including sensing, communications, radar, imaging and information storage. Presented by the leading researchers in the field Covers both scientific and technological perspectives Provides different perspectives on current technological contexts of SBS in a range of different application areas, including sensing, communications, radar, imaging and information storage

MicroLEDs'', Volume 106 is currently recognized as the ultimate display technology and one of the fastest-growing technologies in the world as technology giants utilize it on a wide-ranging set of products. This volume combines contributions from MicroLED pioneers and world''s leading experts in the field who focus on the MicroLED development, current cutting-edge technologies of pursuing for realizing MicroLED large flat panel displays and televisions, virtual reality and 3D displays, light source for LI-FI data communications, neural interface and optogenetics, and future MicroLED technology trends.Contains contributions from original MicroLED inventors and pioneersProvides the most comprehensive and updated status of MicroLED technological advancements and applicationsUpdates on future MicroLED technology trends

Diamond for Quantum Applications Part 1, Volume 103, the latest release in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters on a variety of timely topics. Each chapter is written by an international board of authors. Provides the authority and expertise of leading contributors from an international board of authorsPresents the latest release in the Semiconductors and Semimetals seriesUpdated release includes the latest information on the use of diamonds for quantum applications

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronicsOutlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologiesWritten by a panel of academic and industry experts in each field

Photonic Crystal Metasurface Optoelectronics, Volume 101, covers an emerging area of nanophotonics that represents a new range of optoelectronic devices based on free-space coupled photonic crystal structures and dielectric metasurfaces. Sections in this new release include Free-space coupled nanophotonic platforms, Fano resonances in nanophotonics, Fano resonances in photonic crystal slabs, Transition from photonic crystals to dielectric metamaterials, Photonic crystals for absorption control and energy applications, Photonic crystal membrane reflector VCSELs, Fano resonance filters and modulators, and Fano resonance photonic crystal sensors.Presents the latest in an emerging area of research with great potentials for research and commercializationIncludes sections written by world leading researchers in the field

III-Nitride Semiconductor Optoelectronicsácovers the latest breakthrough research and exciting developments in the field of III-nitride compound semiconductors. It includes important topics on the fundamentals of materials growth, characterization, and optoelectronic device applications of III-nitrides. Bulk, quantum well, quantum dot, and nanowire heterostructures are all thoroughly explored.Contains the latest breakthrough research in III-nitride optoelectronics Provides a comprehensive presentation that covers the fundamentals of materials growth and characterization and the design and performance characterization of state-of-the-art optoelectronic devices Presents an in-depth discussion on III-nitride bulk, quantum well, quantum dot, and nanowire technologies

Semiconductor Nanowires: Part A, Number 93 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires.

This volume is concerned with the crystal growth, optical properties, and optical device application of the self-formed quantum dot, which is one of the major subjects in the semiconductor research field.

Conducting polymers were discovered in 1970s, in Japan. Several breakthroughs have been made in the design and fabrication technology of the organic devices. This book describes the advances in these organic materials and devices.

The study of Silicone Germanium strained layers has implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. This work describes its developments in technology and modelling. It also includes a bibliography of over 400 papers providing an overview of the subject.

Reflects the industrially important developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous land

This volume in this series of numbered volumes addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Reviews the experimental and theoretical studies in the field of laser crystallization of silicon . This work covers the phenomena related to the laser crystallization process and the properties of the resulting polycrystalline silicon. It also contains applications for industry, particularly in the fabrication of thin-film electronics.

Aimed at the graduate student or working researcher, this work includes a review of InP-based HFETs and complementary HFETs. It offers a three-chapter review of resonant tunneling; and provides an emphasis on circuits as well as devices.

Part of the series of numbered volumes known as "Semiconductors and Semimetals", this volume includes important applications that are to be expected for information storage, isotopic fiber-optics, and tunable solid state lasers, isotopic optoelectronics, as well as neutron transmutation doping.

Part of the "Semiconductors and Semimetals" series, this work is useful for physicists, chemists, materials scientists, and device engineers in modern industry.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous land

Since its inception in 1966, the series of numbered volumes known as "Semiconductors and Semimetals" has distinguished itself through the selection of authors, editors, and contributors. Reflecting the interdisciplinary nature of the field that the series covers, these volumes are aimed at physicists, chemists, materials scientists, and others.

Suitable for physicists, chemists, materials scientists, and device engineers in modern industry.

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

Chalcogenide glass is made up of many elements from the Chalcogenide group. This work presents a comprehensive survey of the properties of chalcogenide glass under various external impacts. It deals with the electrical and optical properties of chalcogenide vitreous semiconductors (CVS).

Suitable for physicists, chemists, materials scientists, and device engineers in modern industry.

Suitable for physicists, chemists, materials scientists and device engineers in modern industry.

Suitable for physicists, chemists, materials scientists and device engineers in modern industry.

Reflect the industrially important developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures.