Bøker i Semiconductors and Semimetals-serien

Provides detailed coverage of hydrogen in silicon. This work includes a chapter on the neutralization of defects in III*b1V semiconductors.

Suitable for physicists, chemists, materials scientists and device engineers in modern industry.

Reflect the industrially important developments in research and applications of semiconductor properties and behavior under desirable risk-free conditions at high pressures.

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

Part of the series of numbered volumes known as "Semiconductors and Semimetals", this volume includes important applications that are to be expected for information storage, isotopic fiber-optics, and tunable solid state lasers, isotopic optoelectronics, as well as neutron transmutation doping.

Part of the "Semiconductors and Semimetals" series, this work is useful for physicists, chemists, materials scientists, and device engineers in modern industry.

Suitable for physicists, chemists, materials scientists and device engineers in modern industry.

Suitable for physicists, chemists, materials scientists, and device engineers in modern industry.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous land

This volume in this series of numbered volumes addresses the subject of materials science, specifically the materials aspects, device applications, and fabricating technology of SiC.

Reviews the experimental and theoretical studies in the field of laser crystallization of silicon . This work covers the phenomena related to the laser crystallization process and the properties of the resulting polycrystalline silicon. It also contains applications for industry, particularly in the fabrication of thin-film electronics.

Aimed at the graduate student or working researcher, this work includes a review of InP-based HFETs and complementary HFETs. It offers a three-chapter review of resonant tunneling; and provides an emphasis on circuits as well as devices.

Since its inception in 1966, the series of numbered volumes known as "Semiconductors and Semimetals" has distinguished itself through the selection of authors, editors, and contributors. Reflecting the interdisciplinary nature of the field that the series covers, these volumes are aimed at physicists, chemists, materials scientists, and others.

Suitable for physicists, chemists, materials scientists, and device engineers in modern industry.

Diamond for Quantum Applications Part 1, Volume 103, the latest release in the Semiconductors and Semimetals series, highlights new advances in the field, with this new volume presenting interesting chapters on a variety of timely topics. Each chapter is written by an international board of authors. Provides the authority and expertise of leading contributors from an international board of authorsPresents the latest release in the Semiconductors and Semimetals seriesUpdated release includes the latest information on the use of diamonds for quantum applications

III-Nitride Electronic Devices, Volume 102, emphasizes two major technical areas advanced by this technology: radio frequency (RF) and power electronics applications. The range of topics covered by this book provides a basic understanding of materials, devices, circuits and applications while showing the future directions of this technology. Specific chapters cover Electronic properties of III-nitride materials and basics of III-nitride HEMT, Epitaxial growth of III-nitride electronic devices, III-nitride microwave power transistors, III-nitride millimeter wave transistors, III-nitride lateral transistor power switch, III-nitride vertical devices, Physics-Based Modeling, Thermal management in III-nitride HEMT, RF/Microwave applications of III-nitride transistor/wireless power transfer, and more. Presents a complete review of III-Nitride electronic devices, from fundamental physics, to applications in two key technical areas - RF and power electronicsOutlines fundamentals, reviews state-of-the-art circuits and applications, and introduces current and emerging technologiesWritten by a panel of academic and industry experts in each field

Photonic Crystal Metasurface Optoelectronics, Volume 101, covers an emerging area of nanophotonics that represents a new range of optoelectronic devices based on free-space coupled photonic crystal structures and dielectric metasurfaces. Sections in this new release include Free-space coupled nanophotonic platforms, Fano resonances in nanophotonics, Fano resonances in photonic crystal slabs, Transition from photonic crystals to dielectric metamaterials, Photonic crystals for absorption control and energy applications, Photonic crystal membrane reflector VCSELs, Fano resonance filters and modulators, and Fano resonance photonic crystal sensors.Presents the latest in an emerging area of research with great potentials for research and commercializationIncludes sections written by world leading researchers in the field

Reflecting the truly interdisciplinary nature of the field, this title is part of the Semiconductors and Semimetals series. It is of interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Reflecting the interdisciplinary nature of Quantum Efficiency in Complex Systems, this title is of interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry.

Suitable for physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry, this series reflects the truly interdisciplinary nature of the field.

Interdisciplinary nature of the field that the series covers, this title is suitable for physicists, chemists, materials scientists, and device engineers in modern industry.

Reviews the advances made of thin film diamond, a semiconductor that may one day rival silicon as the material of choice for electronics. This work covers topics such as: the results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, and more.

Deals with room-temperature nuclear detectors. This volume focuses on the electrical, optical, and structural properties of semiconductors used for room-temperature nuclear detectors.

Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous land