Utvidet returrett til 31. januar 2024

Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Om Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9783030085940
  • Bindende:
  • Paperback
  • Sider:
  • 232
  • Utgitt:
  • 30. januar 2019
  • Utgave:
  • 12018
  • Dimensjoner:
  • 155x235x13 mm.
  • Vekt:
  • 454 g.
  • BLACK NOVEMBER
  Gratis frakt
Leveringstid: 2-4 uker
Forventet levering: 27. november 2024

Beskrivelse av Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;

Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;

Enables design of smaller, cheaper and more efficient power supplies.

Brukervurderinger av Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion



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