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Om Radiation Defect Engineering

Explores radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. This book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9789812565211
  • Bindende:
  • Hardback
  • Sider:
  • 264
  • Utgitt:
  • 21. november 2005
  • Dimensjoner:
  • 167x254x22 mm.
  • Vekt:
  • 706 g.
  Gratis frakt
Leveringstid: 2-4 uker
Forventet levering: 31. mars 2025

Beskrivelse av Radiation Defect Engineering

Explores radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. This book considers the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results.

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