Utvidet returrett til 31. januar 2025

Strain-Induced Effects in Advanced MOSFETs

Om Strain-Induced Effects in Advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9783709119334
  • Bindende:
  • Paperback
  • Sider:
  • 252
  • Utgitt:
  • 23. august 2016
  • Utgave:
  • 12011
  • Dimensjoner:
  • 168x240x0 mm.
  • Vekt:
  • 459 g.
  • BLACK NOVEMBER
  Gratis frakt
Leveringstid: 2-4 uker
Forventet levering: 8. desember 2024

Beskrivelse av Strain-Induced Effects in Advanced MOSFETs

Strain is used to boost performance of MOSFETs. Modeling of strain effects on transport is an important task of modern simulation tools required for device design. The book covers all relevant modeling approaches used to describe strain in silicon. A rigorous overview of transport modeling in strained devices is given.

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