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Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Om Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

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  • Språk:
  • Engelsk
  • ISBN:
  • 9780127521466
  • Bindende:
  • Hardback
  • Sider:
  • 316
  • Utgitt:
  • 12 juni 1997
  • Dimensjoner:
  • 152x229x22 mm.
  • Vekt:
  • 620 g.
  Gratis frakt
Leveringstid: 2-4 uker
Forventet levering: 26 oktober 2024

Beskrivelse av Effect of Disorder and Defects in Ion-Implanted Semiconductors: Optical and Photothermal Characterization

Focusing on the physics of the annealing kinetics of the damaged layer, this book presents an overview of characterization techniques and a comparison of the information on annealing kinetics. It also provides basic knowledge of ion implantation-induced defects; focuses on physical mechanisms of defect annealing; and more.

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